JPS5814538A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5814538A
JPS5814538A JP56111864A JP11186481A JPS5814538A JP S5814538 A JPS5814538 A JP S5814538A JP 56111864 A JP56111864 A JP 56111864A JP 11186481 A JP11186481 A JP 11186481A JP S5814538 A JPS5814538 A JP S5814538A
Authority
JP
Japan
Prior art keywords
region
silicon substrate
forming
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56111864A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0245327B2 (en]
Inventor
Takao Hiraguchi
平口　隆夫
Kazunori Imaoka
今岡　和典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56111864A priority Critical patent/JPS5814538A/ja
Priority to DE8282303755T priority patent/DE3279673D1/de
Priority to EP82303755A priority patent/EP0070713B1/en
Publication of JPS5814538A publication Critical patent/JPS5814538A/ja
Priority to US07/373,591 priority patent/US4970568A/en
Priority to US07/577,511 priority patent/US5094963A/en
Publication of JPH0245327B2 publication Critical patent/JPH0245327B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/127—Process induced defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP56111864A 1981-07-17 1981-07-17 半導体装置の製造方法 Granted JPS5814538A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56111864A JPS5814538A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法
DE8282303755T DE3279673D1 (en) 1981-07-17 1982-07-16 A semiconductor device comprising a bulk-defect region and a process for producing such a semiconductor device
EP82303755A EP0070713B1 (en) 1981-07-17 1982-07-16 A semiconductor device comprising a bulk-defect region and a process for producing such a semiconductor device
US07/373,591 US4970568A (en) 1981-07-17 1989-06-30 Semiconductor device and a process for producing a semiconductor device
US07/577,511 US5094963A (en) 1981-07-17 1990-09-05 Process for producing a semiconductor device with a bulk-defect region having a nonuniform depth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111864A JPS5814538A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5814538A true JPS5814538A (ja) 1983-01-27
JPH0245327B2 JPH0245327B2 (en]) 1990-10-09

Family

ID=14572074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111864A Granted JPS5814538A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US4970568A (en])
EP (1) EP0070713B1 (en])
JP (1) JPS5814538A (en])
DE (1) DE3279673D1 (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198334A (ja) * 1987-02-13 1988-08-17 Komatsu Denshi Kinzoku Kk 半導体シリコンウエ−ハの製造方法
US6325848B1 (en) 1997-11-11 2001-12-04 Nec Corporation Method of making a silicon substrate with controlled impurity concentration
US7546725B2 (en) 2005-08-05 2009-06-16 Tsubakimoto Chain Co. Silent chain

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
EP0197948A4 (en) * 1984-09-28 1988-01-07 Motorola Inc PROTECTION AGAINST THE DISCHARGE OF A DEPLETION AREA OF A LOAD MEMORY.
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
DE3856150T2 (de) * 1987-10-08 1998-08-06 Matsushita Electric Ind Co Ltd Halbleiteranordnung und verfahren zur herstellung
JPH01194426A (ja) * 1988-01-29 1989-08-04 Sharp Corp 半導体装置
US5250445A (en) * 1988-12-20 1993-10-05 Texas Instruments Incorporated Discretionary gettering of semiconductor circuits
US5217912A (en) * 1990-07-03 1993-06-08 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device
JP2735407B2 (ja) * 1990-08-30 1998-04-02 株式会社東芝 半導体装置およびその製造方法
CA2064486C (en) * 1992-03-31 2001-08-21 Alain Comeau Method of preparing semiconductor wafer with good intrinsic gettering
DE4223914C2 (de) * 1992-06-30 1996-01-25 Fraunhofer Ges Forschung Verfahren zum Herstellen eines vertikalen Leistungsbauelementes mit reduzierter Minoritätsträgerlebensdauer in dessen Driftstrecke
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US5364800A (en) * 1993-06-24 1994-11-15 Texas Instruments Incorporated Varying the thickness of the surface silicon layer in a silicon-on-insulator substrate
US5478762A (en) * 1995-03-16 1995-12-26 Taiwan Semiconductor Manufacturing Company Method for producing patterning alignment marks in oxide
US6004868A (en) 1996-01-17 1999-12-21 Micron Technology, Inc. Method for CMOS well drive in a non-inert ambient
JPH11224935A (ja) * 1997-12-02 1999-08-17 Mitsubishi Electric Corp 半導体集積回路の基板及び半導体集積回路の製造方法
JP2000091443A (ja) * 1998-09-14 2000-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6069048A (en) * 1998-09-30 2000-05-30 Lsi Logic Corporation Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits
JP2000164830A (ja) * 1998-11-27 2000-06-16 Mitsubishi Electric Corp 半導体記憶装置の製造方法
US7160385B2 (en) * 2003-02-20 2007-01-09 Sumitomo Mitsubishi Silicon Corporation Silicon wafer and method for manufacturing the same
US20040259321A1 (en) * 2003-06-19 2004-12-23 Mehran Aminzadeh Reducing processing induced stress
RU2418343C1 (ru) * 2009-12-07 2011-05-10 Государственное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводниковой структуры
US9214457B2 (en) * 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
CN106960782A (zh) * 2017-03-31 2017-07-18 上海先进半导体制造股份有限公司 半导体衬底的防漏电方法
RU2680607C1 (ru) * 2018-01-23 2019-02-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899793A (en) * 1968-08-24 1975-08-12 Sony Corp Integrated circuit with carrier killer selectively diffused therein and method of making same
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3895965A (en) * 1971-05-24 1975-07-22 Bell Telephone Labor Inc Method of forming buried layers by ion implantation
US3838440A (en) * 1972-10-06 1974-09-24 Fairchild Camera Instr Co A monolithic mos/bipolar integrated circuit structure
US3929529A (en) * 1974-12-09 1975-12-30 Ibm Method for gettering contaminants in monocrystalline silicon
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
JPS5297666A (en) * 1976-02-12 1977-08-16 Hitachi Ltd Production of semiconductor device containing pn junctions
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
EP0023656B1 (en) * 1979-07-23 1984-05-09 Kabushiki Kaisha Toshiba Charge storage type semiconductor device
JPS5680139A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
EP0042901B1 (fr) * 1980-06-26 1984-10-31 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
US4424526A (en) * 1981-05-29 1984-01-03 International Business Machines Corporation Structure for collection of ionization-induced excess minority carriers in a semiconductor substrate and method for the fabrication thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198334A (ja) * 1987-02-13 1988-08-17 Komatsu Denshi Kinzoku Kk 半導体シリコンウエ−ハの製造方法
US6325848B1 (en) 1997-11-11 2001-12-04 Nec Corporation Method of making a silicon substrate with controlled impurity concentration
US7546725B2 (en) 2005-08-05 2009-06-16 Tsubakimoto Chain Co. Silent chain

Also Published As

Publication number Publication date
EP0070713A3 (en) 1985-11-27
EP0070713B1 (en) 1989-05-03
US5094963A (en) 1992-03-10
EP0070713A2 (en) 1983-01-26
US4970568A (en) 1990-11-13
JPH0245327B2 (en]) 1990-10-09
DE3279673D1 (en) 1989-06-08

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